vishay siliconix SI1400DL document number: 71179 s10-0721-rev. d, 29-mar-10 www.vishay.com 1 n-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet : 2.5 v rated ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( )i d (a) - 20 0.150 at v gs = 4.5 v 1.7 0.235 at v gs = 2.5 v 1.3 ordering information: SI1400DL-t1-e3 (lead (pb)-free) SI1400DL-t1-ge3 (lead (pb)-free and halogen-free) sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view d d g d d s marking code nd xx lot traceability and date code part # code yy notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 1.7 1.6 a t a = 85 c 1.2 1.0 pulsed drain current i dm 5 continuous source current (diode conduction) a i s 0.8 0.8 maximum power dissipation a t a = 25 c p d 0.625 0.568 w t a = 85 c 0.40 0.295 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 165 200 c/w steady state 180 220 maximum junction-to-foot (drain) steady state r thjf 105 130
www.vishay.com 2 document number: 71179 s10-0721-rev. d, 29-mar-10 vishay siliconix SI1400DL notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a v ds = 16 v, v gs = 0 v, t j = 85 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 2 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.7 a 0.123 0.150 v gs = 2.5 v, i d = 1.3 a 0.195 0.235 forward transconductance a g fs v ds = 10 v, i d = 1.7 a 5 s diode forward voltage a v sd i s = 0.8 a, v gs = 0 v 0.78 1.1 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 1.7 a 2.1 4.0 nc gate-source charge q gs 0.3 gate-drain charge q gd 0.4 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 20 i d ? 1 a, v gen = 4.5 v, r g = 6 10 17 ns rise time t r 30 50 turn-off delay time t d(off) 14 25 fall time t f 815 source-drain reverse recovery time t rr i f = 0.8 a, di/dt = 100 a/s 30 50 output characteristics 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 4.5 v thr u 3 v 2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 1.5 v 2.5 v transfer characteristics 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 125 c -55 c 25 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d
document number: 71179 s10-0721-rev. d, 29-mar-10 www.vishay.com 3 vishay siliconix SI1400DL typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) 0 0.1 0.2 0.3 0.4 0.5 012345 i d - drain c u rrent (a) v gs = 2.5 v v gs = 4.5 v 0 0.9 1. 8 2.7 3.6 4.5 0 0.5 1.0 1.5 2.0 2.5 v ds = 10 v i d = 1.7 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c 10 0.1 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s - so u rce c u rrent (a) i s 1 capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 60 120 1 8 0 240 300 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 1.7 a t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0 0.0 8 0.16 0.24 0.32 0.40 012345 i d = 1.7 a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v )
www.vishay.com 4 document number: 71179 s10-0721-rev. d, 29-mar-10 vishay siliconix SI1400DL typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71179 . threshold voltage - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) single pulse power 0 6 10 2 4 po w er ( w ) time (s) 8 130 10 0.01 0.1 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 400 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
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